STx22NM60N دیتاشیت

STx22NM60N

مشخصات دیتاشیت

نام دیتاشیت STx22NM60N
حجم فایل 607.756 کیلوبایت
نوع فایل pdf
تعداد صفحات 25

مشاهده دیتاشیت STx22NM60N

دانلود دیتاشیت

سایر مستندات

STF22NM60N 11 pages

STF22NM60N 23 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STF22NM60N
  • Power Dissipation (Pd): 30W
  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 16A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 220mΩ@10V,8A
  • Package: TO-220F-3
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: STF22
  • detail: N-Channel 600V 16A (Tc) 30W (Tc) Through Hole TO-220FP

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